Memory Device
directly accessible computer's internal or main memory.
See Also: Memory, Memory Test, DDR, NAND, DRAM, RAM, ROM, Memory Testers, DUT
-
Product
Wafer Prober
Prexa MS
-
The latest fully automated 300mm wafer prober for memory devices. Featuring high rigidity and exceptional thermal control, the system enables full-wafer contact testing.
-
Product
Memory Test System
T5833/T5833ES
Test System
T5833 system is a cost-efficient, high-volume test solution capable of performing both wafer sort and final test of DRAM and NAND flash memory devices. Amid surging sales of mobile electronics, DRAMs, NAND flash memories and multi-chip packages (MCPs) — the main device types used in smart phones and tablets — are quickly evolving toward higher speeds and greater device capacity. Internet and cloud servers also are driving demand for faster, higher-capacity ICs. Yet the cost of testing today's wide array of memory devices is an obstacle for chipmakers, which urgently require solutions that can deliver high functionality, high performance and low cost of test (COT). Advantest's new, multifunctional T5833 memory test system meets these needs, delivering both wafer sort and final test capabilities for a full range of memory devices, including LPDDR3-DRAMs, high-speed NAND flash memories and next-generation non-volatile memory ICs.
-
Product
High Speed Pick and Place Handler
Commander 2000
-
At throughput rates in excess of 2000 Units per Hour the HT Commander 2000 system provides unparalleled performance for the production handling and programming of flash memory devices or modules.
-
Product
PLD ISP Feature, GTE 10.00p
K8220A
-
The PLD ISP feature allows the test developer engineer to specify a configuration bitstream file in VCL digital test file, much like programming a Flash memory device. The PLD ISP feature supports multiple PLD configuration data formats are supported including. Serial Vector Format (SVF), Standard Test And Programming Language (STAPL), Jam, Jam Byte Code (JBC) object files.
-
Product
Memory Test System
T5221
Test System
The T5521 is a memory test system that supports wafer test and wafer burn-in test of non-volatile memory devices such as NAND flash, housed within a multi-wafer prober to reduce test floor footprint.
-
Product
16GB ECC SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V16GE56-SB
Memory Module
SAM Original Chip, Anti-sulfuration, PCB: 30μ gold finger. Independent Power Management IC build-in, ECC function support.
-
Product
16GB SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V16GN56-SB
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
-
Product
16GB DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-D4U16GE32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
-
Product
32GB DDR4-3200 2GbX8 1.2V Samsung Chip
AQD-D4U32GN32-SB
Memory Module
32GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
-
Product
Dynamic Power Device Analyzer/Double Pulse Tester
PD1500A
Power Device Analyzer
As an off-the-shelf measurement solution, the PD1500A delivers reliable, repeatable measurements of wide-bandgap semiconductors. The platform ensures user safety and protection of the system’s measurement hardware.
-
Product
16G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V16GN56-SBH
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
-
Product
8GB SO-DIMM DDR5-5600 262Pin 1GX16 1.1V Unbuffered Hynix Chip
AQD-SD5V8GN56-HC
Memory Module
Hynix Original Chip, Increased Banks and Burst Length, DDR5 5.6GT/s. Same-Bank Refresh, On-die ECC for Enhanced RAS.
-
Product
4G DDR4-3200 512X16 1.2V SAM -20~85℃
AQD-SD4U4GN32-SP2
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
-
Product
8GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-SD4U8GE32-SE
Memory Module
8GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
-
Product
8GB SO-DDR5-5600 1GX16 1.1V SAM
AQD-SD5V8GN56-SC
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
-
Product
USRP-2954, 10 MHz to 6 GHz, GPS-Disciplined OCXO, Reconfigurable USRP Software Defined Radio Device
783153-01
Software Defined Radio Device
The USRP-2954 provides an integrated hardware and software solution for rapidly prototyping high-performance wireless communication systems. Built on the LabVIEW reconfigurable I/O (RIO) architecture, USRP RIO delivers an integrated hardware and software solution, so researchers can prototype faster and shorten time to results. You can prototype a range of advanced research applications that include multiple input, multiple output (MIMO); synchronization of heterogeneous networks; LTE relaying; RF compressive sampling; spectrum sensing; cognitive radio; beamforming; and direction finding. The USRP-2954 is equipped with a GPS-disciplined 10 MHz oven-controlled crystal oscillator (OCXO) reference clock. The GPS disciplining delivers improved frequency accuracy and synchronization capabilities.
-
Product
Wide Temperature Server DIMM
SQR-RD4M
Dual In-Line Memory Module (DIMM)
Original Hynix IC chip adopted, Wide operating temperature support -25~85oC, Data transfer rate up to 3200 MT/s.
-
Product
32G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V32GN56-SBH
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
-
Product
32GB DDR5-5600 2GX8 1.1V SAM
AQD-D5V32GN56-SB
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
-
Product
16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C
AQD-D4U16R32-SEW
Memory Module
Registered DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance. 1.2V power consumption, Samsung original chip, wide temperatures from -40° to 85°C.
-
Product
USRP-2920, 20 MHz Bandwidth, 50 MHz to 2.2 GHz USRP Software Defined Radio Device
781906-01
Software Defined Radio Device
20 MHz Bandwidth, 50 MHz to 2.2 GHz USRP Software Defined Radio Device - The USRP‑2920 is a tunable RF transceiver with a high-speed analog‑to‑digital converter and digital‑to‑analog converter for streaming baseband I and Q signals to a host PC over 1 Gigabit Ethernet. You can also use the USRP‑2920 for the following applications: white space; broadcast FM; public safety; land-mobile, low-power unlicensed devices on industrial, scientific, and medical (ISM) bands; sensor networks; cell phone; amateur radio; or GPS.
-
Product
8GB DDR4 SODIMM-3200 1GbX8 SAM
AQD-SD4U8GN32-SE
Memory Module
DDR4 3200Mhz Unbuffered SO-DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance, 1.2V power consumption. Samsung original chip, 100% tested for stability, compatibility and performance.
-
Product
SODIMM DDR4 3200MT/s
SQR-SD4S
Dual In-Line Memory Module (DIMM)
Original Hynix IC chips adopted, Data transfer rate: 3200MT/s. Capacity: 4/8/16/32GB, Operating temperature: 0 °C ~ 85 °C Lifetime warranty.
-
Product
16GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U16GN32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
-
Product
Micron 8G DDR4 3200 288PIN 1GbX8 REG 1.2V
96D4-8G3200ER-MI
Dual In-Line Memory Module (DIMM)
DDR4-3200 Registered ECC DIMM, 1.2V power consumption, Supports ECC error detection and correction. Data bus inversion (DBI) for data bus, Low-power auto self refresh (LPASR).
-
Product
Memory
-
Renesas is renowned for its product lifetimes, and our memory products are no different. Our wide range of low power SRAM products provide high reliability, stable supply and long lifetime support often not found in these devices, making them ideal for industrial designs. Renesas’ ultra-fast QDR™ (Quad Data Rate) SRAMs are ideal for next-generation high bandwidth communication systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. Our EEPROM realizes high speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology, a CMOS process and low voltage circuitry technology.
-
Product
Memory Tester
RAMCHECK
-
RAMCHECK is our most advanced memory tester and is the latest in our product line. Highly modular and user friendly, it redefines the capabilities of an affordable and portable ram checker.
-
Product
CXL Memory
-
SQRAM launches next-gen CXL 2.0 Memory Expansion, offering high-speed, low-latency performance to meet the needs of large AI training and HPC clusters.
-
Product
RightMark Memory Analyzer
RMMA
-
Before this test packet was created there was no proper software for measuring vital system parameters such as CPU/Chipset/RAM providing steady and reliable (reproducible) test results and allowing for changing test parameters in a wide range. Vital low-level system characteristics include latency and real RAM bandwidth, average/minimal latency of different cache levels and its associativity, real L1-L2 cache bandwidth and TLB levels specs. Besides, these aspects are usually not paid sufficient attention in product technical documentation (CPU or chipset). Such test suite, which combines a good deal of subsets aimed at measuring objective system characteristics, is a must have for estimating crucial objective platform parameters.
-
Product
Memory And Storage
-
Intel provides technically advanced products that support every level of computing—from data center workloads to enthusiast usage. Intel® Optane™ memory creates an accelerated bridge between memory and storage. Intel® Solid State Drives (Intel® SSDs) provide storage flexibility, stability, and efficiency.
