Memory Device
directly accessible computer's internal or main memory.
See Also: Memory, Memory Test, DDR, NAND, DRAM, RAM, ROM, Memory Testers, DUT
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Product
Memory Test Software
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Teradyne’s customers count on us for our Near Device Under Test (DUT) technology that gives memory device manufacturers a guaranteed performance advantage. A brief description of dynamic memory and storage memory devices will highlight why device manufacturers depend on Teradyne’s memory test solutions.
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Product
Cantilever Probe Card
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MPI Cantilever Probe Card is widely applied on gold bump and pad wafer testing for display driver, logic, and memory device. MPI’s cantilever probes are the corresponding answer to the demands of fine pitch, small pad size, high speed, less cleaning, multi-DUT, high pin count, and ultra-low leakage requirements. With outstanding craftsmanship, innovative architecture and proven methodologies based on mechanical and electrical simulation/measurement results, making MPI the top cantilever provider worldwide.
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Product
Debug probe for ARM Cortex processors
USB Multilink ACP
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P&E’s USB Multilink ACP is a debug probe which allows a PC/laptop access to JTAG/SWD on ARM Cortex devices from several manufacturers (see complete list below). It connects between a USB port on a Windows machine and the standard debug connector on the target. The product photos to the left of this page show how the headers can be accessed by simply flipping open the plastic case. Ribbon cables suitable for a variety of architectures are included. By using the USB Multilink ACP, the user can take advantage of the debug mode to halt normal processor execution and use a PC to control the processor. The user can then directly control the target’s execution, read/write registers and memory values, debug code on the processor, and program internal or external FLASH memory devices.
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Product
PXI Oscilloscope 2 Channel, 250Msa/s
PXI‑5114
Oscilloscope
The cost-optimized PXI‑5114 oscilloscope has two channels with flexible settings for coupling, impedance, voltage range, and filtering. PXI oscilloscopes also offer a variety of trigger options, large onboard memory, and a device driver that includes streaming and analysis capabilities. The device is particularly suitable for applications with fast signals that require flexible measurement configurations and an analog bandwidth of up to 125 MHz. The PXI‑5114 also features PXI‑based synchronization and data streaming capabilities.
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Product
8GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U8GN32-SE
Memory Module
8GB, DDR 4 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
Dynamic Power Device Analyzer/Double Pulse Tester
PD1500A
Power Device Analyzer
As an off-the-shelf measurement solution, the PD1500A delivers reliable, repeatable measurements of wide-bandgap semiconductors. The platform ensures user safety and protection of the system’s measurement hardware.
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Product
16GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U16GN32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
8GB SO-DIMM DDR5-5600 262Pin 1GX16 1.1V Unbuffered Hynix Chip
AQD-SD5V8GN56-HC
Memory Module
Hynix Original Chip, Increased Banks and Burst Length, DDR5 5.6GT/s. Same-Bank Refresh, On-die ECC for Enhanced RAS.
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Product
8GB DDR4 SODIMM-3200 1GbX8 SAM
AQD-SD4U8GN32-SE
Memory Module
DDR4 3200Mhz Unbuffered SO-DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance, 1.2V power consumption. Samsung original chip, 100% tested for stability, compatibility and performance.
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Product
16GB SO-DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-SD4U16GN32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
16GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-SD4U16GE32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
32GB DDR5-5600 2GX8 1.1V SAM
AQD-D5V32GN56-SB
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
4G DDR4-3200 512X16 1.2V SAM -20~85℃
AQD-SD4U4GN32-SP2
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
USRP Software Defined Radio Device
Software Defined Radio Device
The USRP Software Defined Radio Device is a reconfigurable RF device that includes a combination of host-based processors, FPGAs, and RF front ends. The USRP Software Defined Radio Device include options that range from lower cost options with fixed FPGA personalities to high-end radios with a large, open FPGAs and wide instantaneous bandwidth. These devices can be used for applications such as multiple input, multiple output (MIMO) and LTE/WiFi testbeds, SIGINT, and radar systems.
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Product
16GB ECC SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V16GE56-SB
Memory Module
SAM Original Chip, Anti-sulfuration, PCB: 30μ gold finger. Independent Power Management IC build-in, ECC function support.
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Product
16G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V16GN56-SBH
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
SODIMM DDR4 3200MT/s
SQR-SD4S
Dual In-Line Memory Module (DIMM)
Original Hynix IC chips adopted, Data transfer rate: 3200MT/s. Capacity: 4/8/16/32GB, Operating temperature: 0 °C ~ 85 °C Lifetime warranty.
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Product
16GB SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V16GN56-SB
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
Rugged SODIMM DDR4 2666/3200 Wide Temperature
SQR-YD4I
Dual In-Line Memory Module (DIMM)
Robust PCB designed with Mounting Hole with Military MIL-810G verified. Extreme Data Transfer rate up to 3200 MT/s, Capacity: up to 32GB. Wide Temperature supported: -40°C ~ 85 °C, Original IC chip (Samsung/Hynix).
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Product
32GB R-DDR5 5600 R-Dimm 2GX8 1.1V SAM
AQD-D5V32GR56-SB
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, Compatible with server platform, 30u” golden finger, Operating Temperature: 0°C ~ 85°C.
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Product
16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C
AQD-D4U16R32-SEW
Memory Module
Registered DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance. 1.2V power consumption, Samsung original chip, wide temperatures from -40° to 85°C.
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Product
16GB DDR5-5600 2GX8 1.1V SAM
AQD-D5V16GN56-SB
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
USRP‑2930, 20 MHz Bandwidth, 50 MHz to 2.2 GHz, Included GPS-Disciplined OCXO, USRP Software Defined Radio Device
781910-01
Software Defined Radio Device
20 MHz Bandwidth, 50 MHz to 2.2 GHz, Included GPS-Disciplined OCXO, USRP Software Defined Radio Device - The USRP‑2930 is a tunable RF transceiver with a high-speed analog‑to‑digital converter and digital‑to‑analog converter for streaming baseband I and Q signals to a host PC over 1 Gigabit Ethernet. It also features a GPS-disciplined oscillator (GPSDO) with PPS accuracy of ±50 ns. You also can use the NI USRP‑2930 for the following communications applications: white space; broadcast FM; public safety; land-mobile, low-power unlicensed devices on industrial, scientific, and medical (ISM) bands; sensor networks; cell phone; amateur radio; or GPS.
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Product
32G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V32GN56-SBH
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
4G DDR4 2400 288Pin 512MBX8 1.2V Registered Samsung Chip
AQD-D4U4GR24-SG
Memory Module
DDR4-2400 Registered DIMM. – standard height, 30μ" gold plating thickness (IPC-2221 Standard) 1.2V power consumption. Low-power auto self- refresh (LPASR) Provides better reliability, availability and serviceability (RAS) and improves data integrity.
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Product
16GB DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-D4U16GE32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
USRP-2954, 10 MHz to 6 GHz, GPS-Disciplined OCXO, Reconfigurable USRP Software Defined Radio Device
783153-01
Software Defined Radio Device
The USRP-2954 provides an integrated hardware and software solution for rapidly prototyping high-performance wireless communication systems. Built on the LabVIEW reconfigurable I/O (RIO) architecture, USRP RIO delivers an integrated hardware and software solution, so researchers can prototype faster and shorten time to results. You can prototype a range of advanced research applications that include multiple input, multiple output (MIMO); synchronization of heterogeneous networks; LTE relaying; RF compressive sampling; spectrum sensing; cognitive radio; beamforming; and direction finding. The USRP-2954 is equipped with a GPS-disciplined 10 MHz oven-controlled crystal oscillator (OCXO) reference clock. The GPS disciplining delivers improved frequency accuracy and synchronization capabilities.
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USRP-2920, 20 MHz Bandwidth, 50 MHz to 2.2 GHz USRP Software Defined Radio Device
781906-01
Software Defined Radio Device
20 MHz Bandwidth, 50 MHz to 2.2 GHz USRP Software Defined Radio Device - The USRP‑2920 is a tunable RF transceiver with a high-speed analog‑to‑digital converter and digital‑to‑analog converter for streaming baseband I and Q signals to a host PC over 1 Gigabit Ethernet. You can also use the USRP‑2920 for the following applications: white space; broadcast FM; public safety; land-mobile, low-power unlicensed devices on industrial, scientific, and medical (ISM) bands; sensor networks; cell phone; amateur radio; or GPS.
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Product
8GB SO-DDR5-5600 1GX16 1.1V SAM
AQD-SD5V8GN56-SC
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
Memory And Storage
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Intel provides technically advanced products that support every level of computing—from data center workloads to enthusiast usage. Intel® Optane™ memory creates an accelerated bridge between memory and storage. Intel® Solid State Drives (Intel® SSDs) provide storage flexibility, stability, and efficiency.
