Flash Memory
retains data absent of power. Also known as: Flash Device
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Product
Xhorse AM29Fxxx
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For the programmer vvdi prog. To the eyes and programming of flash memory: SOP48, TSOP48 with reversed pinout, TSOP48 with standard pinout.
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Product
Flash ISP Feature, GTE 10.00p
K8219B
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The Flash ISP feature enables in-system programming that is usually executed through a flash player application that drives the MCU to execute the programming onto the flash device.
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Product
Power System Recorder with CDR , PMU and IEC 61850 station bus protocol
TESLA 4000
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ERLPhase Power Technologies Ltd
The new TESLA 4000 is an intelligent, state of the art, user-friendly multi-timeframe dynamic power system recorder with advanced Phasor Measurement Unit (PMU) and Continuous Disturbance Recording (CDR) capabilities. Wide area swing recording accomodates system performance analysis in minutes Meets NERC continuous disturbance recording standards with non-volatile on board flash memory No mechanical moving parts – flash drive eliminates most common mode of failure in recorders. Each flash drive holds 1000 records. IEEE C37.118-2005 SynchroPhasor Standard
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Product
External Data Storage Devices
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External data storage devices can be used for redundant data storage, additional data storage, or convenient data retrieval from the field. These devices use a variety of technologies, including USB, flash memory, CompactFlash, and microSD.
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Product
16GB ECC SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V16GE56-SB
Memory Module
SAM Original Chip, Anti-sulfuration, PCB: 30μ gold finger. Independent Power Management IC build-in, ECC function support.
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Product
Semiconductor Memory Tester
T5851
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Advantest Corporation has introduced the T5851 system, designed to provide a cost-effective test solution for high-performance universal flash storage (UFS) devices and PCIe BGA solid-state drives (SSDs) memory ICs in high demand by makers of low-power, mobile applications such as smart phones, tablets and ultra-portable laptops. The flexible T5851 tester is available in both production and engineering models. This allows the system to be used for reliability and qualification testing as well as test-program development or, when equipped with an automated component handler such as Advantest''''s M6242, high-volume production. As a fully integrated, system-level test solution, the T5851 provides multi-protocol support in one tool while its tester-per-DUT architecture and proprietary hardware accelerator allow it to achieve industry-leading test times.
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Product
16GB SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V16GN56-SB
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
16GB DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-D4U16GE32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
32GB DDR4-3200 2GbX8 1.2V Samsung Chip
AQD-D4U32GN32-SB
Memory Module
32GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
16G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V16GN56-SBH
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
8GB SO-DIMM DDR5-5600 262Pin 1GX16 1.1V Unbuffered Hynix Chip
AQD-SD5V8GN56-HC
Memory Module
Hynix Original Chip, Increased Banks and Burst Length, DDR5 5.6GT/s. Same-Bank Refresh, On-die ECC for Enhanced RAS.
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Product
4G DDR4-3200 512X16 1.2V SAM -20~85℃
AQD-SD4U4GN32-SP2
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
8GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-SD4U8GE32-SE
Memory Module
8GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
8GB SO-DDR5-5600 1GX16 1.1V SAM
AQD-SD5V8GN56-SC
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
Xilinx Zynq ARM + FPGA SoM
TE0715-7030
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Sundance Multiprocessor Technology Ltd.
TE0715s are industrial-grade Xilinx Zynq-7000 System on Modules with 4 MGT Links , a gigabit Ethernet transceiver, 8 Gbit (1 Gbyte) DDR3 SDRAM with 32-bit width, 32 Mbyte SPI Flash memory for configuration and operation, and powerful switch-mode power supplies for all on-board voltages. A large number of configurable I/Os is provided via rugged high-speed stacking strips.
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Product
Xilinx Artix-7 FPGA SoM
TE0710
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Sundance Multiprocessor Technology Ltd.
TE0710s are industrial-grade FPGA modules integrating a Xilinx Artix-7 T FPGA, a gigabit Ethernet transceiver (physical layer), 1 Gbit (128 Mbyte) DDR3 SDRAM with 8-bit width, 32 Mbyte Flash memory for configuration and operation, and powerful switch-mode power supplies for all onboard voltages.
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Product
Wide Temperature Server DIMM
SQR-RD4M
Dual In-Line Memory Module (DIMM)
Original Hynix IC chip adopted, Wide operating temperature support -25~85oC, Data transfer rate up to 3200 MT/s.
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Product
RX Family Of 32-bit High Power Efficiency MCUs
RX200
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The RX200 Series offers the best mix of low power consumption and improved performance in the RX Family. It delivers max. of 80MHz CPU operation with 32KB to 1MB of embedded flash memory. RX200 Series offers a wide set of peripherals, including USB, CAN, ADC, advanced security, and IEC60730 appliance safety standard support. The RX200 Series is suitable for industrial equipment, home appliances, office equipment, healthcare products, meters, and so on. Some of the RX200 Series products are tuned for motor control solutions, too.
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Product
32G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V32GN56-SBH
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
32GB DDR5-5600 2GX8 1.1V SAM
AQD-D5V32GN56-SB
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C
AQD-D4U16R32-SEW
Memory Module
Registered DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance. 1.2V power consumption, Samsung original chip, wide temperatures from -40° to 85°C.
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Product
8GB DDR4 SODIMM-3200 1GbX8 SAM
AQD-SD4U8GN32-SE
Memory Module
DDR4 3200Mhz Unbuffered SO-DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance, 1.2V power consumption. Samsung original chip, 100% tested for stability, compatibility and performance.
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Product
SODIMM DDR4 3200MT/s
SQR-SD4S
Dual In-Line Memory Module (DIMM)
Original Hynix IC chips adopted, Data transfer rate: 3200MT/s. Capacity: 4/8/16/32GB, Operating temperature: 0 °C ~ 85 °C Lifetime warranty.
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Product
PD Calibrator
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PDCAL has excellent pulse-with stability; scale calibration factors are permanently stored inside its flash memory. Thanks to on board photo coupler PDCAL output pulse can be synchronized with the actual line frequency through external surrounding electrical light source systems.
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Product
16GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U16GN32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
Laser Flash Photolysis
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This system that makes complex electronics, cumbersome software and large optical benches a thing of the past. The LFP system incorporates everything needed except the excitation laser. This is a simple, yet powerful instrument, ready to perform a wide range of time resolved kinetic and spectroscopic measurements involving transient absorption or diffuse reflectance. The LFP system, including the monochromator and digitizer is completely computer controlled, making it easy to obtain
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Product
Micron 8G DDR4 3200 288PIN 1GbX8 REG 1.2V
96D4-8G3200ER-MI
Dual In-Line Memory Module (DIMM)
DDR4-3200 Registered ECC DIMM, 1.2V power consumption, Supports ECC error detection and correction. Data bus inversion (DBI) for data bus, Low-power auto self refresh (LPASR).
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Product
Memory
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Renesas is renowned for its product lifetimes, and our memory products are no different. Our wide range of low power SRAM products provide high reliability, stable supply and long lifetime support often not found in these devices, making them ideal for industrial designs. Renesas’ ultra-fast QDR™ (Quad Data Rate) SRAMs are ideal for next-generation high bandwidth communication systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. Our EEPROM realizes high speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology, a CMOS process and low voltage circuitry technology.
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Product
Memory Tester
RAMCHECK
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RAMCHECK is our most advanced memory tester and is the latest in our product line. Highly modular and user friendly, it redefines the capabilities of an affordable and portable ram checker.
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Product
Flash Point Testers
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Flash point is the lowest liquid temperature at which a test flame causes sample vapors to ignite. Fire point is the temperature at which the test flame causes the sample to ignite and remain burning for ≥5 seconds.





























