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GaN
Gallium Nitride is a stable wide bandgap semiconductor material. Also known as: Gallium Nitride
See Also: LED, Transistor
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Amplifiers
We have designed and manufactured amplifiers using all major semiconductor materials, LDMOS, GaN, GaAs, and InP, to produce narrow, wideband, and pulse, receive and transmit amplifiers from 1 MHz to 220 GHz and power levels from mW to over 10 kW.
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High Voltage Optically Isolated Probe, 700 MHz Bandwidth. Includes soft-carrying case.
DL07-ISO
The DL-ISO enables highest confidence in GaN and SiC device characterization with highest accuracy, best signal fidelity, and comprehensive connectivity.
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Driver Amplifiers (< 3 W)
Qorvo's driver amplifiers are designed to provide good linear or efficiency performance for gain stages prior to the final power amplifier in a transmitter chain. These products support frequencies up to 46 GHz, using process technologies such as InGaP HBT, power pHEMT, E/D pHEMT and GaN.
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High Frequency Amplifiers (> 6 GHz)
Qorvo's portfolio of amplifiers that operate over 6 GHz includes both GaAs and GaN devices, available in die and package forms.
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Defect Inspection Systems
Candela® defect inspection systems detect and classify a wide range of critical defects on compound semiconductor substrates (GaN, GaAs, InP, sapphire, SiC, etc.) and hard disk drives, with high sensitivity at production throughputs.
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Space Power Solutions
Teledyne e2v HiRel Electronics (HiRel) offers leading edge power solutions dedicated for high-reliability applications. The introduction of Galium Nitride (GaN) technology solutions enable high power density designs with four times less space requirements than traditional MOSFETs. The Teledyne HiRel Point-of-Load (POL) products combine multiple load capabilities, outstanding radiation performance with high levels of integration and easy to use features.
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GaN Amplifiers
SBP-3233831838-KFKF-E1-HR
Model SBP-3233831838-KFKF-E1-HR is a power amplifier with a typical small signal gain of 18 dB and a nominal Psat of +38 dBm across the frequency range of 32 to 38 GHz. The DC power requirement for the amplifier is +30 VDC/2 A. The mechanical configuration is an inline structure with K(F) connector as its input port and output port. Other port configurations, such as K connectors and WR-28 waveguides for either the input or output, are also available under different model numbers.
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DL-ISO 40 Vpp MMCX Tip
DL-ISO-40V-TIP
- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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IsoVu Isolated Probes
The IsoVu Measurement Systems can make nearly impossible measurements – like high-side Vgs- a reality, providing today’s power engineer with measurement insights not available in other power systems and instruments. When performing near-impossible measurements, especially in those involving Gallium Nitride (GaN) and Silicon Carbide (SiC), it can be extremely time consuming and cumbersome. IsoVu eliminates those concerns: IsoVu probes offer better common mode rejection and higher bandwidth for high EMI environments and on power FETs like SiC and GaN.
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Wideband GaN Amplifiers
The Teledyne RF & Microwave family of GaN-based amplifiers maximizes power density and efficiency, and establishes a new benchmark for small size in the 0.1 to 6.0 GHz range that operates over multi octave. With dimensions of 2.5"L x 2"W x 0.42"H at only 2.1 cubic inches, these modular, non-ITAR GaN amplifiers maintain the rugged design characteristics needed for harsh airborne and land based requirements.
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Silicon & Compound Wafers
Compound semiconductors are undergoing a major expansion addressing many new applications and using various materials such as SiC, GaN, GaAs and others, to improve the performance of new devices in several segments such as Power and Face Recognition.
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Substrate Manufacturing
KLA’s substrate manufacturing portfolio includes defect inspection and review, metrology and data management systems that help substrate manufacturers manage quality throughout the wafer fabrication process. Specialized wafer inspection and review tools assess wafer surface quality and detect, count and bin defects during production and as a critical part of outgoing wafer qualification. Wafer geometry systems ensure the wafer shape is extremely flat and uniform in thickness, with precisely controlled wafer shape topography. Data analysis and management systems proactively identify substrate fabrication process excursions that can lead to yield loss. KLA’s substrate manufacturing systems support process development, production monitoring and final quality check of a broad range of substrate types and sizes including silicon, prime silicon, SOI, sapphire, glass, GaAs, SiC, GaN, InP, GaSb, Ge, LiTaO3, LiNBO3, and epitaxial wafers.
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Communications/Data Link Amplifiers
Amplifiers specific to the Communications systems include a wide range of Solid State Power Amplifiers (SSPAs) and Low Noise Amplifiers (LNAs) originally from Paradise Datacom and a range of organically developed products within TMS. Satcom SSPAs are considered a core competence of Paradise Datacom's product line who have invested heavily in converting it's complete amplifier offering from GaAs to GaN from C-Band all the way to Ka-Band.
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DL-ISO 2500 Vpp Square Pin Tip
DL-ISO-2500V-TIP
- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Amplifiers
We have designed and manufactured amplifiers using all major semiconductor materials, LDMOS, GaN, GaAs, and InP, to produce narrow, wideband, and pulse, receive and transmit amplifiers from 1 MHz to 220 GHz and power levels from mW to over 10 kW.
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High Throughput Test Platform for Multi-Site & Index Parallel Applications
ETS-88
The ETS-88 is an optimal test platform for testing a wide variety of devices including: simple analog, high precision, high voltage, high current / power, automotive, video, audio, complex mixed-signal, as well as emerging power processes like SiC and GaN.
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Semiconductor Curve Tracer
CS-8000 Series
The CS-8000 series are equipped with a high-voltage source of up to 5 kV and a high-current source of 2 kA. It features Pulse output, Gate pattern, and very small current measurement capabilities, and it supports the design evaluation of wideband-gap semiconductors such as SiC and GaN.
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DL-ISO 10 Vpp MMCX Tip
DL-ISO-10V-TIP
- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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DL-ISO 2 Vpp MMCX Tip
DL-ISO-2V-TIP
- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Ruggedized SSPA 4 to 8 GHz, 40 W GAN Hybrid Module
AMP1110
Exodus Advanced Communications
Ruggedized Solid State Power Amplifier. Our Best in Class Power Amplifier AMP1110 a 4 to 8 GHz, 40 W Minimum Saturated Power output module. The AMP1110 is a Class AB linear GaN hybrid design with instantaneous bandwidth. Other features include 4.0dB Peak to Peak flatness and 12A Max Consumption. This AMP1110 has Built-in protection circuits, high reliability and ruggedness. It is suitable for any application such as EW, EMI/RFI Lab, and High Power testing.
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High Voltage Fiber Optic Probe, 150 MHz Bandwidth
HVFO108
- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Osram High Power Blue Violet Laser Diodes (450-488nm)
The Optoelectronics Company Ltd
OSRAM Opto Semiconductors is a key player in the field of visible InGaN (Indium Gallium Nitride) lasers. OSRAM Opto Semiconductors offer leading product performance and innovative packaging. Thanks to their excellent beam quality, OSRAM laser diodes are ideally suited for the optical imaging of light. Not only that, but their small package size is particularly beneficial to highly compact systems, such as pico projectors. OSRAM laser diodes offer high efficiency and long lifetime: due to their excellent efficiency (ratio of light produced compared to electric power consumed), the temperature increase experienced by blue InGaN lasers during operation is kept to an absolute minimum, allowing them to deliver a long life – up to 10,000 hours at 40 °C.
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GaN substrates
Sumitomo Electric Industries, Ltd.
Gallium Nitride (GaN) substrates are widely used for optical devices in the blue-violate to green ranges due to their excellent material characteristics. In recent years, GaN substrates have been drawing attention for power devices. Many development projects are underway.
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50 µs Pulse Medium Current Source/Measure Unit (MCSMU)
B1514A
The 50 s Pulse Medium Current SMU is an SMU designed for faster pulsed IV measurement. It enables a pulsed measurement down to 50 s pulse width, a 10 times or more narrow pulsed measurement than provided by a comparable conventional SMU. In addition, the instrument offers a wider range and versatility, up to 30 V / 1A, with voltage/current programmability. It is useful to characterize high to medium power devices on the new materials such as SiC and GaN, and organic devices, and the MCSMU expands your choices of pulsed IV measurement.
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High Voltage Optically Isolated Probe, 350 MHz Bandwidth. Includes soft-carrying case.
DL03-ISO
The DL-ISO enables highest confidence in GaN and SiC device characterization with highest accuracy, best signal fidelity, and comprehensive connectivity.
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GaN Power Amplifiers > 5W
Macom Technology Solutions Holdings Inc.
MACOM GaN RF power amplifier solutions are designed with the latest GaN-on-SiC and GaN-on-Si technologies. Our MACOM PURE CARBIDE series of GaN-on-SiC power amplifiers offers high performance and reliability for the most demanding applications. Our expanding GaN portfolio is designed to address the challenging requirements of Aerospace & Defense, Industrial, Scientific and Medical applications and 5G wireless infrastructure. MACOM GaN products deliver output power levels ranging from 2 W to over 7 kW and exhibit best in class RF performance with respect to gain and efficiency. For sensitive Aerospace & Defense applications MACOM can offer a US only supply chain with AS9100D Certification.
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Rad Hard GaN FETs
Wide band gap semiconductor technologies such as Gallim Nitride Field Effect Transistors (GaN FETs) have been gaining interest for power management and conversion in space applications. These devices feature higher breakdown voltage, lower RDS(ON) and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a smaller solution footprint. There is an additional benefit from GaN devices that make them attractive to the space market. These devices are inherently immune to total ionizing dose radiation.
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RF Devices that deliver Comprehensive Solutions for Wireless Systems
Sumitomo Electric Industries, Ltd.
GaN HEMTs, GaAs FETs , MMICs, and low-noise HEMT solutions offer high performance and uncompromised reliability for radar, base stations, SATCOM, point to point, and space applications.
