MOSFET
Metal Oxide Semiconductor Field Effect Transistor
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Product
Thermal FETs
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Pin-compatible with standard Power MOSFET packages and built-in over temperature protection function for body, lighting and heater applications, as well as powertrain applications and 24V battery system applications.
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Product
DrMOS (Driver + FET)
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Renesas' high-performance DrMOS power modules combine a high-performance FET driver and MOSFETs in an advanced package to create high-density DC/DC converters.
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Product
Power MOSFETs
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ST's power MOSFET portfolio offers a broad range of breakdown voltages from –100 to 1700 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. ST's process technology for both high-voltage power MOSFETs (MDmesh™) and low-voltage power MOSFETs (STripFET) ensures an enhanced power handling capability, resulting in high-efficiency solutions. Power MOSFETs belong to the STPOWER family.
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Product
Power ICs - VRPower® (DrMOS) - Power Stage
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The Next Generation VRPower® Power Stage, Vishay’s family of VRPower modules offers an integrated MOSFET and driver power stage with unsurpassed performance. The flagship device, SiC620R is capable of 70 A and achieves more than 95 % efficiency in a typical multiphase buck converter design. The device has several package enhancements that enable it to offer superior MOSFET dynamic performance. Combined with Vishay’s state-of-the-art Gen IV MOSFET technology, these enhancements enable 3 % better efficiency and over 50 °C lower operating temperatures compared to previous generation DrMOS devices while shrinking the footprint by 33 %.
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Product
MOSFETs For High Frequency Amplifier
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The MOSFETs shown below are best suited for amplification of high-frequency signals.
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Product
PathWave IC-CAP HiSIM_HV Model Extraction Package
W7026E
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The W7026E PathWave IC-CAP HiSIM_HV Model Extraction Package provides measurement and extraction procedures for the HiSIM_HV industry-standard model for MOSFET devices.
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Product
Inverters
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Analytic Systems has been producing Pure Sinewave Inverters since 1994. Originally designed for running navigation computers on commercial and fishing vessels, the line has evolved into a range of models with power outputs from 300 to 3600 watts featuring Digital Signal Processor control. High power MosFet technology creates a low voltage Sinewave that is fed into a compact toroidal step-up transformer to produce a very clean low EMI AC output. Northrup Grumman evaluated inverters from all major manufacturers and chose the IPSi series by Analytic Systems for their Army portable command centers for precisely this reason.
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Product
PathWave IC-CAP PSP Model Extraction Package
W7021E
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The W7021E PathWave IC-CAP PSP Model Extraction Package provides measurement and extraction procedures for PSP, a CMC industry-standard model advanced surface potential model for MOSFET devices.
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Product
Medium & High Voltage Pulse Generators (Rise Time > 1 ns)
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Offer fast medium voltage pulsing with high current capability. These models are ideal for driving solenoids, pulse testing of MOSFETs, and other applications.
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Product
Programmable Parametric Tester For Discrete Semiconductors
IST-8800
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IST Information Scan Technology, Inc.
The IST-8800 is a fully programmable, low cost tester that provides parameter measurements or parametric GO/NO GO test for transistors, diodes, MOS-FETs, Regulators, Triacs, Zeners, SCRs, and J-FETs. These devices can be tested up to 5 amps or 1200 volts with a measurement range down to the nano amp range. Only four universal test fixtures are required which can test the device across a wide range of packages.
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Product
SparkFun BabyBuck Regulator Breakout
3.3V (AP63203)
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Who doesn't occasionally need power regulation? We certainly do, so we've designed the SparkFun BabyBuck Regulator Breakout to help us with just such a task. Featuring the AP63203 from Diodes Inc, this breakout board takes advantage of a 2A synchronous buck converter that has a wide input voltage range of 3.8V to 32V and fully integrated 125mΩ high-side power MOSFET/68mΩ lowside power MOSFET to provide high-efficiency step-down DC/DC conversion. All of this snuggled up in a low-profile, TSOT26 package that's integrated into a 0.4in by 0.5in board.
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Product
1584W to 2500W - Single Output
HFE Series
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*1U rackmount containing up to 5 units*Up to 29.2W/in³ power density*Internal ORing MOSFET & Current Share*High Efficiency*Up to 9,500W in 1U rack*PMBus™(I2C) and LAN options
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Product
Power Cycling Semiconductor Life Test System
ITC52300
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The ITC52300 is designed for high-volume intermittent or steady-state operating life testing on Insulated Gate Bipolar Transistors (IGBTs), power MOSFETs, diodes, and other bipolar devices in a production environment. (The ITC52300 is an enhanced version of the ITC5230.)
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Product
Unclamped Inductive Load Tester
ITC55300C
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Model ITC55300C performs ruggedness testing of power MOSFETs, discretes and modules and IGBTs, discretes and modules. It also tests single and dual diodes, and forward and reverse bias of IGBTs when used with an optional ITC55-RSF Output Selector Box.
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Product
MOSFETs, MESFETs, and Schottky Diodes
Semiconductor Module
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The Semiconductor Module allows for detailed analysis of semiconductor device operation at the fundamental physics level. The module is based on the drift-diffusion equations, using isothermal or nonisothermal transport models. It is useful for simulating a range of practical devices including bipolar, metal semiconductor field-effect transistors (MESFETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), Schottky diodes, thyristors, and P-N junctions.
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Product
Intelligent Power Devices
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Intelligent Power Devices have built-in peripheral and protection functions, and support system reliability improvement and unit downsizing. This device lineup can support a variety of automotive system requirements and includes intelligent power switches, thermal FETs, MOSFET drivers, and a motor driver.
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Product
RF Power Transistors
Silicon MOSFET
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Macom Technology Solutions Holdings Inc.
At MACOM we offer a broad range of silicon bipolar transistor products designed for applications ranging from DC to 3.5 GHz. Our silicon bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all-gold metallization fabrication processes ensure high performance and long term reliability for ground and space applications.
