Materials Development Corporation
MDC continues to improve both the hardware and software for C-V measurements and analyses of semiconductor devices. Taking full advantage of the latest C-V measuring instruments and more powerful computers, MDC offers the widest variety of C-V and I-V measurement systems available.
- 818.700.8290
- (775) 854-2585
- info@mdc4cv.com
- 21541 Nordhoff St.
B
Chatsworth, CA 91311
United States of America
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Mercury Probes
Materials Development Corporation
MERCURY PROBES are precision instruments that enable rapid, convenient, and non-destructive measurements of semiconductor samples by probing wafers with mercury to form contacts of well-defined area.
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Electrochemistry Tests
Materials Development Corporation
CyclicVoltammetry and Galvanostatic Charging are tests used throughout the industrial and scientific communities to study chemical reactions and behavior of electronic structures. They are extremely helpful in the monitoring of nano based dielectrics, used in super /ultra capacitors or self-assembled monolayers (SAMs). The Cyclic Voltammetry test applies a ramping voltage to a device and measures the resulting current. In acapacitor-like structure the current reveals loss in the dielectric as well as degradation over time. CyclicVoltammetry is used to characterize the performance of supercapacitors and ultracapacitors formed using various nano-technologies. It is also useful in the studies of self-assembled monolayers used for sensors.
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Solar Cells/ Photovoltaic Devices
Materials Development Corporation
MDC offers a comprehensive array of current-voltage, capacitance-voltage, and resistivity measurements to characterize solar cells and PV devices. CSM/Win systems and software can help to fine tune your process for maximum efficiency. Critical values such as series and shunt resistances, maximum power point (both actual and theoretical), and fill factor are automatically determined.
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Conductance Measurement and Analysis
Materials Development Corporation
MDC uses conductance to give a complete picture of MOS devices as well as to correct for series resistance effects. MDC C-V plotters use conductance and capacitance measurements to plot true device capacitance and depletion region conductance.
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Cryogenic Probe Station
CryoPro
Materials Development Corporation
The MDC Model 441 Cryogenic Probe Station is a cost effective alternative to high-priced vacuum based cryogenic probe stations. With up to five probes available and sample diameters up to six inches, the MDC Cryogenic Probe Station allows for electrical measurements at temperatures near liquid nitrogen levels (77K).
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Four-Point Probe
Materials Development Corporation
Materials Development Corporation offers the complete line of Four Point Probe systems from AIT. Systems are available to measue up to 12" diameter (300 mm) wafers as well as specialty systems for Photovoltaic wafers and substrates. For more information on these systems, contact MDC.
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Hot Chucks
Materials Development Corporation
Probe stations to suit all measurement requirementswhether production, engineering or research. See individual data sheets for more details.
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Production C-V Measurement
Materials Development Corporation
The production software offers a streamlined C-V plotting and bias-temperature stress program with minimumoperator input. A single keystroke begins the measurement.
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Quasi-Static Measurements
Materials Development Corporation
The Quasi-static measurement ompares a high frequency capacitance-voltage plot to a C-V plot measured near zero Hertz (quasi-static). By analyzing the difference in the depletion region of the curves, the interface trap density (Dit) can be determined in the sample under test.
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Srive-Level Capacitance Profiling (DLCP) Measurement
Materials Development Corporation
Drive-levelcapacitance profiling is an extremely useful technique to characterize amorphoussilicon or other semiconductor material with large concentrations of deep band gap states.
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Customized Software
Materials Development Corporation
If the software packages offered do not meet your specific needs,special software can be written for custom applications.The engineers and programmers at MDC candevelop or modify applications to fit your requirements. Examples include: *Customer specific measurements *Interfacing with required meters *Production versions of measurements *Interfacing with probers and other measurement platforms *Specialized requirements
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Triangular Voltage Sweep (TVS) Option
Materials Development Corporation
The TVS method measures the current-voltage characteristics of an MOS device at high temperature. This technique, which allows direct measurement of mobile ionmovement, has higher sensitivity and is much faster than the conventional CVBT measurement.
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Junction Measurement and Analysis
Materials Development Corporation
A comprehensive set of analyses for junction diode or Schottky barriers begins with C-V data gathering that adjusts the voltage step to the slope of the C-V characteristics. This assures an optimum set of C-Vdata whether the voltage range is small or large. Doping profile and resistivity profile are both available at the touch of a key. Plots of 1/C2 - V or Log(C) - Log (V+ phi) show doping uniformity and doping slope factor. Exclusive recalculation options allow adjustment of stray capacitance and area to facilitate calibration using a standard reference wafer of known doping or resistivity.
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Gate Oxide Integrity Option
Materials Development Corporation
Oxide integrity of MOS devices can be evaluated by various techniques such as Time Dependent DielectricBreakdown, Charge to Breakdown, or ramped voltage. When used with a prober, map distribution of breakdown fields. Output the data using histograms, cumulativefailure, or Weibull plots.
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MOS Capacitance-Time Measurement and Analysis
Materials Development Corporation
The Capacitance-Time transient resulting from an MOS device pulsed into deep depletion reveals important information about bulk properties of the semiconductor and about damage or contaminants introduced during processing.
